With DLW resist 2D-patterns in the µm-range are written in a photo resist layer on a substrate with a focused laser beam. No mask is needed as in conventional photo lithography.
The writehead allows feature sizes down to 2.5 µm with a substrate size up to 6”. The machine complements E-Beam lithography and is a less expensive and faster alternative for structures without nano sized features. Typically this method is applied to generate first prototypes and allows a faster iteration.
Due to the used wavelength of 355 nm it is possible to pattern thicker resist layers (e.g. SU-8 type resists). The focusing of the laser beam leads in this case to sloped sidewalls (< 5°).
In case of reflective substrates a bottom antireflection coating (BARC) has to be applied, which may be considered in the whole process layout.